TSM1N80CW RPG

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Overview of TSM1N80CW RPG

Part NumberTSM1N80CW RPG
ManufacturerTaiwan Semiconductor
DescriptionMOSFET N-CH 800V 300MA SOT223
DatasheetsDownload TSM1N80CW RPG Datasheet PDFPDF Icon
Price for TSM1N80CW RPG

Specification of TSM1N80CW RPG

Status
Obsolete
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Taiwan Semiconductor Corporation
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25C
300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
21.6Ohm @ 150mA, 10V
Vgs(th) (Max) @ Id
5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
6 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
200 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.1W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-223
Package / Case
TO-261-4, TO-261AA

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